PART |
Description |
Maker |
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK30V4045 |
14.0-14.5 GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC36V7785A |
7.7-8.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFK35V4045 |
14.0-14.5 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V4450A |
4.4-5.0 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET 5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|